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AMD R5316G1609U2K 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

AMD R5316G1609U2K 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

总分
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

差异 规格 评论

差异

AMD R5316G1609U2K 8GB 需要考虑的原因
AMD R5316G1609U2K 8GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 73
    左右 -152% 更低的延时
  • 更快的读取速度，GB/s
    12.2 left arrow 6.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.6 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD R5316G1609U2K 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 29
  • 读取速度，GB/s
    6.3 left arrow 12.2
  • 写入速度，GB/s
    5.2 left arrow 9.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1309 left arrow 2443

AMD R5316G1609U2K 8GB RAM的比较

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM的比较

Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F3-2666C12-8GTXD 8GB
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内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
内存RAM
Corsair CMT32GX5M2B5200C40 16GB
Corsair CMT32GX5M2B5200C40 16GB
Kingston KF548C38-16 16GB
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内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
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内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston X5H5PW-MIB 8GB
Kingston X5H5PW-MIB 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Corsair CMK16GX4M2G4000C16 8GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Corsair CM4B8G1J3000K16W4 8GB
Corsair CM4B8G1J3000K16W4 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMT16GX4M2C3200C14 8GB
Corsair CMT16GX4M2C3200C14 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3000C15-8GTZ 8GB
G Skill Intl F4-3000C15-8GTZ 8GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Kingston KF2666C16D4/16G 16GB
Kingston KF2666C16D4/16G 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
内存RAM