Samsung M471B5773DH0-CH9 2GB vs Corsair CM4B8G1J3000K16W4 8GB

总分

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

总分

Corsair CM4B8G1J3000K16W4 8GB

Corsair CM4B8G1J3000K16W4 8GB

差异规格评论

差异

Samsung M471B5773DH0-CH9 2GB

需要考虑的原因
Samsung M471B5773DH0-CH9 2GB

报告一个错误

Corsair CM4B8G1J3000K16W4 8GB

需要考虑的原因
Corsair CM4B8G1J3000K16W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 43

左右 -43% 更低的延时
更快的读取速度，GB/s

17 11

测试中的平均数值
更快的写入速度，GB/s

14.4 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5773DH0-CH9 2GB

Corsair CM4B8G1J3000K16W4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 30
读取速度，GB/s

11.0 17.0
写入速度，GB/s

7.2 14.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1393 3465

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung M471B5773DH0-CH9 2GB

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Corsair CM4B8G1J3000K16W4 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Apacer Technology 78.C1GS7.AUW0B 8GB

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Kingston KF552C40-16 16GB

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Samsung M378A5244CB0-CWE 4GB

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Crucial Technology CT8G4SFS8266.M8FD 8GB

Nanya Technology M2S4G64CB8HG5N-DI 4GB

Nanya Technology M2S4G64CB8HG5N-DI 4GB

SK Hynix HMA82GR8AMR4N-TF 16GB

SK Hynix HMA82GR8AMR4N-TF 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

Crucial Technology BLS4G4S240FSD.M8FADM 4GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Corsair CMD16GX4M4B3300C16 4GB

Corsair CMD16GX4M4B3300C16 4GB