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AMD R5316G1609U2K 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

AMD R5316G1609U2K 8GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

总分
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分
star star star star star
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

差异 规格 评论

差异

AMD R5316G1609U2K 8GB 需要考虑的原因
AMD R5316G1609U2K 8GB
报告一个错误
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB 需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 73
    左右 -217% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 6.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
AMD R5316G1609U2K 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 23
  • 读取速度，GB/s
    6.3 left arrow 18.1
  • 写入速度，GB/s
    5.2 left arrow 15.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1309 left arrow 3317

AMD R5316G1609U2K 8GB RAM的比较

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
内存RAM
Corsair CM4X16GC3000C16K4D 16GB
Corsair CM4X16GC3000C16K4D 16GB
Team Group Inc. TEAMGROUP-UD4-4300 8GB
Team Group Inc. TEAMGROUP-UD4-4300 8GB
内存RAM
Samsung M471B5673EH1-CF8 2GB
Samsung M471B5673EH1-CF8 2GB
Samsung M471B5273CH0-CF8 4GB
Samsung M471B5273CH0-CF8 4GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3200C16-32GTZR 32GB
G Skill Intl F4-3200C16-32GTZR 32GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905711-007.A00G 4GB
Kingston 9905711-007.A00G 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMW64GX4M8C3000C15 8GB
Corsair CMW64GX4M8C3000C15 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK16GX4M2B3200C14 8GB
Corsair CMK16GX4M2B3200C14 8GB
内存RAM
Super Talent STT-WB160CL0901 2GB
Super Talent STT-WB160CL0901 2GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston ACR24D4S7S8MB-8 8GB
Kingston ACR24D4S7S8MB-8 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905622-075.A00G 8GB
Kingston 9905622-075.A00G 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9965669-009.A00G 8GB
Kingston 9965669-009.A00G 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
内存RAM