AMD R5316G1609U2K 8GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 73

左右 -217% 更低的延时
更快的读取速度，GB/s

18.1 6.3

测试中的平均数值
更快的写入速度，GB/s

15.0 5.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 23
读取速度，GB/s

6.3 18.1
写入速度，GB/s

5.2 15.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1309 3317

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Team Group Inc. Vulcan-1600 4GB

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V-GEN D4H8GL36A8TXV 8GB

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SK Hynix HMT41GS6BFR8A-PB 8GB

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G Skill Intl F4-3600C16-32GTZN 32GB

Kingston KHX1600C9D3/8G 8GB

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Samsung M378A1G43EB1-CRC 8GB

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Nanya Technology M2F2G64CB88B7N-CG 2GB

G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F3-12800CL11-4GBSQ 4GB

G Skill Intl F3-12800CL11-4GBSQ 4GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

A Force Manufacturing Ltd. UD-01G64V2133P 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Corsair CMD32GX4M4B3000C15 8GB

Corsair CMD32GX4M4B3000C15 8GB

Kingston 99U5403-492.A00LF 8GB

Kingston 99U5403-492.A00LF 8GB

Kingston 9905598-028.A00G 8GB

Kingston 9905598-028.A00G 8GB