AMD R534G1601U1S-UO 4GB vs Kingston KKRVFX-MIE 8GB

总分

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分

Kingston KKRVFX-MIE 8GB

Kingston KKRVFX-MIE 8GB

差异规格评论

差异

AMD R534G1601U1S-UO 4GB

需要考虑的原因
AMD R534G1601U1S-UO 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 47

左右 43% 更低的延时

Kingston KKRVFX-MIE 8GB

需要考虑的原因
Kingston KKRVFX-MIE 8GB

报告一个错误

更快的读取速度，GB/s

15 14.7

测试中的平均数值
更快的写入速度，GB/s

10.7 9.2

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

AMD R534G1601U1S-UO 4GB

Kingston KKRVFX-MIE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 47
读取速度，GB/s

14.7 15.0
写入速度，GB/s

9.2 10.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2272 2486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Kingston KKRVFX-MIE 8GB

Kingston KKRVFX-MIE 8GB

Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Samsung M393A4K40CB2-CTD 32GB

Samsung M393A4K40CB2-CTD 32GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Kingston HP37D4U1S8ME-8XR 8GB

Kingston HP37D4U1S8ME-8XR 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3866C18-4GVK 4GB

G Skill Intl F4-3866C18-4GVK 4GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Crucial Technology BL16G32C16U4BL.M16FE 16GB

Crucial Technology BL16G32C16U4BL.M16FE 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

SK Hynix HMA81GU6CJR8N-XN 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB