Samsung M391B5673EH1-CH9 2GB vs SK Hynix HMA81GU6CJR8N-XN 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

SK Hynix HMA81GU6CJR8N-XN 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时

SK Hynix HMA81GU6CJR8N-XN 8GB

需要考虑的原因
SK Hynix HMA81GU6CJR8N-XN 8GB

报告一个错误

更快的读取速度，GB/s

16.4 12.8

测试中的平均数值
更快的写入速度，GB/s

12.6 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

SK Hynix HMA81GU6CJR8N-XN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

12.8 16.4
写入速度，GB/s

9.0 12.6
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2143 3046

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

SK Hynix HMA81GU6CJR8N-XN 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Kingston 9905598-006.A00G 8GB

Kingston 9905598-006.A00G 8GB

Kingston HP16D3LS1KFG/4G 4GB

Kingston HP16D3LS1KFG/4G 4GB

Kingston 99U5624-001.A00G 8GB

Kingston 99U5624-001.A00G 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Kingston ACR16D3LFS1KBG/2G 2GB

Kingston ACR16D3LFS1KBG/2G 2GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

G Skill Intl F4-2666C15-8GVR 8GB

G Skill Intl F4-2666C15-8GVR 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Essencore Limited IM4AGU88N24-FFFHA0 16GB

Essencore Limited IM4AGU88N24-FFFHA0 16GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Kingston 9905678-005.A00G 8GB

Kingston 9905678-005.A00G 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Wilk Elektronik S.A. GR2133S464L15S/8G 8GB

Wilk Elektronik S.A. GR2133S464L15S/8G 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

G Skill Intl F4-2400C15-8GRK 8GB

G Skill Intl F4-2400C15-8GRK 8GB