AMD R534G1601U1S-UO 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

总分

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

差异规格评论

差异

AMD R534G1601U1S-UO 4GB

需要考虑的原因
AMD R534G1601U1S-UO 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 56

左右 52% 更低的延时

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

报告一个错误

更快的读取速度，GB/s

20.1 14.7

测试中的平均数值
更快的写入速度，GB/s

10.5 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R534G1601U1S-UO 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 56
读取速度，GB/s

14.7 20.1
写入速度，GB/s

9.2 10.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2272 2455

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Corsair CMK8GX4M2B3600C18 4GB

Corsair CMK8GX4M2B3600C18 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Corsair CM4X4GF2400C16K4 4GB

Corsair CM4X4GF2400C16K4 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

Crucial Technology CT16G4DFD8266.C16FJ 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Avant Technology W641GU67J7240N8 8GB

Avant Technology W641GU67J7240N8 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Crucial Technology CT4G4DFS8213.C8FBR2 4GB

Crucial Technology CT4G4DFS8213.C8FBR2 4GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-3000C16-16GSXFB 16GB

G Skill Intl F4-3000C16-16GSXFB 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston 9905712-034.A00G 16GB

Kingston 9905712-034.A00G 16GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Corsair CMU16GX4M2C3200C16 8GB

Corsair CMU16GX4M2C3200C16 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F4-3200C16-8GTZSK 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Mushkin 99[2/7/4]200[F/T] 8GB

Mushkin 99[2/7/4]200[F/T] 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-3733C17-16GTZKK 16GB

G Skill Intl F4-3733C17-16GTZKK 16GB