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AMD R538G1601U2S 8GB
G Skill Intl F4-3200C14-16GTZKY 16GB

AMD R538G1601U2S 8GB vs G Skill Intl F4-3200C14-16GTZKY 16GB

总分
star star star star star
AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZKY 16GB

G Skill Intl F4-3200C14-16GTZKY 16GB

差异 规格 评论

差异

AMD R538G1601U2S 8GB 需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 20
    左右 5% 更低的延时
G Skill Intl F4-3200C14-16GTZKY 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZKY 16GB
报告一个错误
  • 更快的写入速度，GB/s
    14.2 left arrow 12.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD R538G1601U2S 8GB
G Skill Intl F4-3200C14-16GTZKY 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    19 left arrow 20
  • 读取速度，GB/s
    18.4 left arrow 18.4
  • 写入速度，GB/s
    12.3 left arrow 14.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3189 left arrow 3540

AMD R538G1601U2S 8GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB

G Skill Intl F4-3200C14-16GTZKY 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2666C16-8GRB 8GB
G Skill Intl F4-2666C16-8GRB 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Inmos + 256MB
Inmos + 256MB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Samsung M378A4G43MB1-CTD 32GB
Samsung M378A4G43MB1-CTD 32GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
SK Hynix GKE160UD102408-2133 16GB
SK Hynix GKE160UD102408-2133 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9965589-037.D00G 8GB
Kingston 9965589-037.D00G 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Apacer Technology 76.D105G.D090B 16GB
Apacer Technology 76.D105G.D090B 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KHX3000C15D4/4GX 4GB
Kingston KHX3000C15D4/4GX 4GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Kingston LV32D4U2S8ME-16X 16GB
Kingston LV32D4U2S8ME-16X 16GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
内存RAM