AMD R538G1601U2S 8GB vs Micron Technology 8ATF1G64HZ-2G6J1 8GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 34

左右 44% 更低的延时
更快的读取速度，GB/s

18.4 15.7

测试中的平均数值
更快的写入速度，GB/s

12.3 11.6

测试中的平均数值

Micron Technology 8ATF1G64HZ-2G6J1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6J1 8GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 34
读取速度，GB/s

18.4 15.7
写入速度，GB/s

12.3 11.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3189 2776

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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A-DATA Technology DDR3 1600 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Essencore Limited KD4AGS88A-26N1600 16GB

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Kingston KVR533D2N4 512MB

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G Skill Intl F4-3200C15-16GTZ 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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V-GEN D4H4GL30A8TS5 4GB

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Kingston 99U5471-052.A00LF 8GB

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SK Hynix HMA41GU6MFR8N-TF 8GB

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Samsung M391B5673FH0-CH9 2GB

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Crucial Technology BLT8G4D30BET4K.C8FD 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

A-DATA Technology AM1P26KCST2-BABS 16GB

A-DATA Technology AM1P26KCST2-BABS 16GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMA851S6JJR6N-VK 4GB

SK Hynix HMA851S6JJR6N-VK 4GB

Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BLS4G4D240FSC.8FBR2 4GB

Crucial Technology BLS4G4D240FSC.8FBR2 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB