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AMD R538G1601U2S 8GB
Samsung M471A5143EB0-CPB 4GB

AMD R538G1601U2S 8GB vs Samsung M471A5143EB0-CPB 4GB

总分
star star star star star
AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分
star star star star star
Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

差异 规格 评论

差异

AMD R538G1601U2S 8GB 需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 35
    左右 46% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 13.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 10.3
    测试中的平均数值
Samsung M471A5143EB0-CPB 4GB 需要考虑的原因
Samsung M471A5143EB0-CPB 4GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD R538G1601U2S 8GB
Samsung M471A5143EB0-CPB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    19 left arrow 35
  • 读取速度，GB/s
    18.4 left arrow 13.5
  • 写入速度，GB/s
    12.3 left arrow 10.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3189 left arrow 2155

AMD R538G1601U2S 8GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB

Samsung M471A5143EB0-CPB 4GB RAM的比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Kingston 9905670-012.A00G 8GB
Kingston 9905670-012.A00G 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Samsung M471A5143EB0-CPB 4GB
Samsung M471A5143EB0-CPB 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
内存RAM
Crucial Technology CT25664BA1339.M8FK 2GB
Crucial Technology CT25664BA1339.M8FK 2GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston HP32D4S2S1ME-8 8GB
Kingston HP32D4S2S1ME-8 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C16-8GTRS 8GB
G Skill Intl F4-3200C16-8GTRS 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CM4X8GF2400C16N2 8GB
Corsair CM4X8GF2400C16N2 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair CMW16GX4M2Z3200C16 8GB
Corsair CMW16GX4M2Z3200C16 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston HP32D4U2S1ME-8 8GB
Kingston HP32D4U2S1ME-8 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
内存RAM