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AMD R538G1601U2S 8GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
比较
AMD R538G1601U2S 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
总分
AMD R538G1601U2S 8GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
差异
规格
评论
差异
需要考虑的原因
AMD R538G1601U2S 8GB
报告一个错误
低于PassMark测试中的延时,ns
19
31
左右 39% 更低的延时
更快的读取速度,GB/s
18.4
12.5
测试中的平均数值
更快的写入速度,GB/s
12.3
9.4
测试中的平均数值
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
AMD R538G1601U2S 8GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
19
31
读取速度,GB/s
18.4
12.5
写入速度,GB/s
12.3
9.4
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
3189
2361
AMD R538G1601U2S 8GB RAM的比较
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston HX316C10F/8 8GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK64GX4M4A2400C16 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Samsung M471B5173DB0-YK0 4GB
Asgard VML41UG-MIC1U22T1 8GB
Samsung M378B5273CH0-CH9 4GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
Kingston KHX3600C17D4/16GX 16GB
Transcend Information JM3200HLE-16G 16GB
Samsung M471B5673FH0-CF8 2GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Kingston K531R8-MIN 4GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Crucial Technology BL16G26C16U4R.16FE 16GB
Kingston K1N7HK-ELC 2GB
G Skill Intl F4-4400C19-32GTZR 32GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Samsung M378A2K43DB1-CTD 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Kingston 9965525-140.A00LF 8GB
Kingston LV36D4U1S8HD-8XR 8GB
A-DATA Technology DDR2 800G 2GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
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Bug description
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