AMD R538G1601U2S-UO 8GB vs G Skill Intl F4-3200C15-4GRKD 4GB

总分

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分

G Skill Intl F4-3200C15-4GRKD 4GB

G Skill Intl F4-3200C15-4GRKD 4GB

差异规格评论

差异

AMD R538G1601U2S-UO 8GB

需要考虑的原因
AMD R538G1601U2S-UO 8GB

报告一个错误

G Skill Intl F4-3200C15-4GRKD 4GB

需要考虑的原因
G Skill Intl F4-3200C15-4GRKD 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 -4% 更低的延时
更快的读取速度，GB/s

16.2 14.2

测试中的平均数值
更快的写入速度，GB/s

12.6 10.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S-UO 8GB

G Skill Intl F4-3200C15-4GRKD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 25
读取速度，GB/s

14.2 16.2
写入速度，GB/s

10.0 12.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2634 3187

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

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Crucial Technology BLS4G4D240FSC.8FBR2 4GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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A-DATA Technology AM2P26KC8T1-BXRS 8GB

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Corsair CMK8GX4M2A2133C13 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

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SK Hynix GKE160UD102408-2133 16GB

AMD R748G2133U2S 8GB

AMD R748G2133U2S 8GB

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AMD R748G2133U2S-UO 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Kingston XJ69DF-HYA 8GB

Kingston XJ69DF-HYA 8GB