Samsung M393B5170FH0-CK0 4GB vs Crucial Technology BL8G30C15U4BL.M8FE1 8GB

总分

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

差异规格评论

差异

Samsung M393B5170FH0-CK0 4GB

需要考虑的原因
Samsung M393B5170FH0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G30C15U4BL.M8FE1 8GB

报告一个错误

更快的读取速度，GB/s

17.3 11.8

测试中的平均数值
更快的写入速度，GB/s

14.1 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CK0 4GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

11.8 17.3
写入速度，GB/s

7.3 14.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2057 3367

RAM Latency Calculator

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最新比较

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Kingston 99U5403-036.A00G 4GB

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G Skill Intl F4-4000C17-8GVKB 8GB

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A-DATA Technology DQKD1A08 1GB

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Micron Technology 16ATF2G64AZ-2G3H1 16GB

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Samsung M378B5173BH0-CH9 4GB

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Ramaxel Technology RMSA3270ME86H9F-2666 4GB

Ramaxel Technology RMSA3270ME86H9F-2666 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

Avant Technology W642GU42J5213N2 16GB

Avant Technology W642GU42J5213N2 16GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

G Skill Intl F4-3300C16-16GTZSW 16GB

G Skill Intl F4-3300C16-16GTZSW 16GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Mushkin MR[ABC]4U360JNNM8G 8GB

Mushkin MR[ABC]4U360JNNM8G 8GB