RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
25
左右 4% 更低的延时
更快的读取速度,GB/s
16
14.3
测试中的平均数值
更快的写入速度,GB/s
12.5
10.7
测试中的平均数值
需要考虑的原因
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
25
读取速度,GB/s
16.0
14.3
写入速度,GB/s
12.5
10.7
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
2583
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Team Group Inc. ZEUS-2133 8GB
Corsair CMW16GX4M1Z3600C18 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA81GS6CJR8N-VK 8GB
Kingston 9905471-071.A00LF 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Samsung M393B2G70BH0-YK0 16GB
SK Hynix HMA81GU6CJR8N-VK 8GB
Samsung M378B5273DH0-CH9 4GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Peak Electronics 256X64M-67E 2GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-2800C14-16GVK 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston 9905678-139.A00G 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
G Skill Intl F4-3600C19-8GSXW 8GB
Corsair CMG16GX4M2E3200C16 8GB
Corsair CMW16GX4M2C3200C16 8GB
Corsair CMSO4GX3M1C1600C11 4GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3600C16-16GTZN 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Kingston KHX3600C18D4/32GX 32GB
报告一个错误
×
Bug description
Source link