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AMD R538G1601U2S-UO 8GB
Micron Technology V-GeN D4V16GL24A8R 16GB

AMD R538G1601U2S-UO 8GB vs Micron Technology V-GeN D4V16GL24A8R 16GB

总分
star star star star star
AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分
star star star star star
Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

差异 规格 评论

差异

AMD R538G1601U2S-UO 8GB 需要考虑的原因
AMD R538G1601U2S-UO 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 68
    左右 62% 更低的延时
  • 更快的写入速度，GB/s
    10.0 left arrow 8.9
    测试中的平均数值
Micron Technology V-GeN D4V16GL24A8R 16GB 需要考虑的原因
Micron Technology V-GeN D4V16GL24A8R 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.9 left arrow 14.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD R538G1601U2S-UO 8GB
Micron Technology V-GeN D4V16GL24A8R 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 68
  • 读取速度，GB/s
    14.2 left arrow 16.9
  • 写入速度，GB/s
    10.0 left arrow 8.9
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2634 left arrow 2007

AMD R538G1601U2S-UO 8GB RAM的比较

Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-3200C16-4GRK 4GB

Micron Technology V-GeN D4V16GL24A8R 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3600C16-16GTRGC 16GB
G Skill Intl F4-3600C16-16GTRGC 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-2400C17-4GFX 4GB
G Skill Intl F4-2400C17-4GFX 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BL4G24C16U4B.8FE 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Golden Empire CL15-17-17 D4-2666 8GB
Golden Empire CL15-17-17 D4-2666 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMK32GX4M4B4000C19 8GB
Corsair CMK32GX4M4B4000C19 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-3600C19-16GTRG 16GB
G Skill Intl F4-3600C19-16GTRG 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
SK Hynix HMA82GS6DJR8N-WM 16GB
SK Hynix HMA82GS6DJR8N-WM 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Neo Forza GKE160SO204808-3200 16GB
Neo Forza GKE160SO204808-3200 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
内存RAM