AMD R538G1601U2S-UO 8GB vs SK Hynix HMAA1GU6CJR6N-XN 8GB

总分

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

总分

SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

差异规格评论

差异

AMD R538G1601U2S-UO 8GB

需要考虑的原因
AMD R538G1601U2S-UO 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时

SK Hynix HMAA1GU6CJR6N-XN 8GB

需要考虑的原因
SK Hynix HMAA1GU6CJR6N-XN 8GB

报告一个错误

更快的读取速度，GB/s

16.7 14.2

测试中的平均数值
更快的写入速度，GB/s

10.6 10.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S-UO 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

14.2 16.7
写入速度，GB/s

10.0 10.6
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2634 2789

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M386A2G40DB0-CPB 16GB

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Crucial Technology BLT16G4D30BET4.C16FD 16GB

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Kingston KHX1600C9D3/8G 8GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Kingston KHX2666C13D4/8GX 8GB

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Samsung M393B5270CH0-CH9 4GB

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SK Hynix HMA851S6CJR6N-UH 4GB

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A-DATA Technology AD73I1B1672EG 2GB

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