Asgard VMA45UG-MEC1U2AW1 8GB vs Micron Technology 8ATF1G64HZ-3G2J1 8GB

总分

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

总分

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

差异规格评论

差异

Asgard VMA45UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB

报告一个错误

Micron Technology 8ATF1G64HZ-3G2J1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2J1 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 47

左右 -38% 更低的延时
更快的读取速度，GB/s

15.6 11.8

测试中的平均数值
更快的写入速度，GB/s

11.9 9.2

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Asgard VMA45UG-MEC1U2AW1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

47 34
读取速度，GB/s

11.8 15.6
写入速度，GB/s

9.2 11.9
内存带宽，mbps

19200 25600

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2323 2812

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393A2G40DB0-CPB 16GB