ASint Technology SSA302G08-EGN1C 4GB vs A-DATA Technology DDR4 3600 2OZ 8GB

总分

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

差异规格评论

差异

ASint Technology SSA302G08-EGN1C 4GB

需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB

报告一个错误

A-DATA Technology DDR4 3600 2OZ 8GB

需要考虑的原因
A-DATA Technology DDR4 3600 2OZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 -4% 更低的延时
更快的读取速度，GB/s

19 12.6

测试中的平均数值
更快的写入速度，GB/s

14.9 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

ASint Technology SSA302G08-EGN1C 4GB

A-DATA Technology DDR4 3600 2OZ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 25
读取速度，GB/s

12.6 19.0
写入速度，GB/s

9.5 14.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2174 3683

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT4G4DFS824A.C8FHP 4GB

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Micron Technology 8ATF2G64HZ-3G2B2 16GB

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Corsair CMD32GX4M2C3200C16 16GB

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Corsair CMK32GX4M4K4133C19 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Corsair CMV16GX4M1L2400C16 16GB

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Kingston 9905471-006.A01LF 4GB

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Crucial Technology BL8G26C16S4B.8FD 8GB

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Corsair CML8GX3M2A1866C9 4GB

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Golden Empire CL19-19-19 D4-2666 4GB

Golden Empire CL19-19-19 D4-2666 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N