RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMK16GX4M4B3600C18 4GB
比较
ASint Technology SSA302G08-EGN1C 4GB vs Corsair CMK16GX4M4B3600C18 4GB
总分
ASint Technology SSA302G08-EGN1C 4GB
总分
Corsair CMK16GX4M4B3600C18 4GB
差异
规格
评论
差异
需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
需要考虑的原因
Corsair CMK16GX4M4B3600C18 4GB
报告一个错误
更快的读取速度,GB/s
16
12.6
测试中的平均数值
更快的写入速度,GB/s
12.2
9.5
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMK16GX4M4B3600C18 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
26
读取速度,GB/s
12.6
16.0
写入速度,GB/s
9.5
12.2
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2174
2793
ASint Technology SSA302G08-EGN1C 4GB RAM的比较
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Corsair CMK16GX4M4B3600C18 4GB RAM的比较
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-156.A00LF 2GB
King Tiger Technology Tigo-2133Mhz-8G 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Crucial Technology CT16G4DFD8213.M16FA 16GB
Kingston 9905403-156.A00LF 2GB
Apacer Technology 78.BAGP4.AR50C 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M393A4K40BB1-CRC 32GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
A-DATA Technology DDR2 800G 2GB
Corsair CMD32GX4M2C3200C14M 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
Samsung 1600 CL10 Series 8GB
Transcend Information TS1GSH64V4B 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston HX424C15FB/16 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
Kingston 99U5474-038.A00LF 4GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-32GTRG 32GB
报告一个错误
×
Bug description
Source link