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ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
比较
ASint Technology SSA302G08-EGN1C 4GB vs Crucial Technology BLS16G4S240FSD.16FAD 16GB
总分
ASint Technology SSA302G08-EGN1C 4GB
总分
Crucial Technology BLS16G4S240FSD.16FAD 16GB
差异
规格
评论
差异
需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
48
左右 46% 更低的延时
更快的读取速度,GB/s
12.6
10.4
测试中的平均数值
更快的写入速度,GB/s
9.5
8.5
测试中的平均数值
需要考虑的原因
Crucial Technology BLS16G4S240FSD.16FAD 16GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
48
读取速度,GB/s
12.6
10.4
写入速度,GB/s
9.5
8.5
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2174
1858
ASint Technology SSA302G08-EGN1C 4GB RAM的比较
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
PNY Electronics PNY 2GB
Crucial Technology CT16G4SFD824A.C16FN 16GB
Kingston 99U5584-017.A00LF 4GB
Kingston KHX3300C16D4/4GX 4GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMR32GX4M2A2666C16 16GB
Kingston 99U5428-018.A00LF 8GB
Kllisre M471A1K43CB1-CTD 8GB
Samsung M393B1G70BH0-CK0 8GB
Avant Technology J641GU42J7240ND 8GB
A-DATA Technology DOVF1B163G2G 2GB
AMD R7416G2400U2S 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Panram International Corporation W4U2400PS-4G 4GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology BL16G32C16U4RL.M8FB1 16GB
Samsung M393B2G70BH0-CK0 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-2400C15-8GVR 8GB
Kingston KF552C40-16 16GB
Corsair CMK64GX4M2A2400C16 32GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3333C16-8GTZKW 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Transcend Information JM2666HSE-16G 16GB
报告一个错误
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