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ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-2933C16-8GTZRX 8GB

ASint Technology SSA302G08-EGN1C 4GB vs G Skill Intl F4-2933C16-8GTZRX 8GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
G Skill Intl F4-2933C16-8GTZRX 8GB

G Skill Intl F4-2933C16-8GTZRX 8GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 72
    左右 64% 更低的延时
  • 更快的写入速度，GB/s
    9.5 left arrow 8.3
    测试中的平均数值
G Skill Intl F4-2933C16-8GTZRX 8GB 需要考虑的原因
G Skill Intl F4-2933C16-8GTZRX 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 12.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-2933C16-8GTZRX 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 72
  • 读取速度，GB/s
    12.6 left arrow 15.8
  • 写入速度，GB/s
    9.5 left arrow 8.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 1951

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

G Skill Intl F4-2933C16-8GTZRX 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Nanya Technology NT4GC72B4NA1NL-CG 4GB
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内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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内存RAM
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Micron Technology 9ASF1G72PZ-2G9E1 8GB
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内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
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Crucial Technology CT8G4DFS832A.C8FE 8GB
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内存RAM
Crucial Technology CT16G4DFD8266.M16FJ 16GB
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Colorful Technology Ltd BAPC08G2666D4S8 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
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内存RAM
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Samsung M378B5673EH1-CF8 2GB
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内存RAM
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Corsair CMK16GX4M2A2133C13 8GB
内存RAM
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KCRXJ6-MIE 16GB
Kingston KCRXJ6-MIE 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4B8G2J2133A15S 8GB
Corsair CM4B8G2J2133A15S 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT16G4DFD8266.M16FD 16GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905678-177.A00G 8GB
Kingston 9905678-177.A00G 8GB
内存RAM