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ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

ASint Technology SSA302G08-EGN1C 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 35
    左右 26% 更低的延时
  • 更快的读取速度，GB/s
    12.6 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 7.9
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 35
  • 读取速度，GB/s
    12.6 left arrow 10.0
  • 写入速度，GB/s
    9.5 left arrow 7.9
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 2200

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB RAM的比较

Team Group Inc. ZEUS-2133 8GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
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