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ASint Technology SSA302G08-EGN1C 4GB
Kingston 9905664-010.A00G 4GB
比较
ASint Technology SSA302G08-EGN1C 4GB vs Kingston 9905664-010.A00G 4GB
总分
ASint Technology SSA302G08-EGN1C 4GB
总分
Kingston 9905664-010.A00G 4GB
差异
规格
评论
差异
需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
更快的写入速度,GB/s
9.5
9.0
测试中的平均数值
需要考虑的原因
Kingston 9905664-010.A00G 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
26
左右 -4% 更低的延时
更快的读取速度,GB/s
13.9
12.6
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Kingston 9905664-010.A00G 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
25
读取速度,GB/s
12.6
13.9
写入速度,GB/s
9.5
9.0
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2174
1944
ASint Technology SSA302G08-EGN1C 4GB RAM的比较
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Kingston 9905664-010.A00G 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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Samsung M3 78T3354BZ0-CCC 256MB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Kingston 99U5429-007.A00LF 2GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Kingston 9965516-112.A00LF 16GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Corsair CMK16GX4M2Z2400C16 8GB
AMD R538G1601U2S-UO 8GB
Crucial Technology CT4G4DFS8213.8FA11?? 4GB
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Golden Empire CL14-16-16 D4-2400 16GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston KHX2933C17D4/8G 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMR32GX4M4C3000C15 8GB
报告一个错误
×
Bug description
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