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ASint Technology SSA302G08-EGN1C 4GB
Neo Forza NMUD480E82-3600 8GB

ASint Technology SSA302G08-EGN1C 4GB vs Neo Forza NMUD480E82-3600 8GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
Neo Forza NMUD480E82-3600 8GB

Neo Forza NMUD480E82-3600 8GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
Neo Forza NMUD480E82-3600 8GB 需要考虑的原因
Neo Forza NMUD480E82-3600 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 26
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    20 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Neo Forza NMUD480E82-3600 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 24
  • 读取速度，GB/s
    12.6 left arrow 20.0
  • 写入速度，GB/s
    9.5 left arrow 17.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 3911

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

Neo Forza NMUD480E82-3600 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF2933C17S4/16G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M3 78T2953EZ3-CF7 1GB
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SK Hynix GKE800SO102408-2400 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Neo Forza NMUD480E82-3600 8GB
Neo Forza NMUD480E82-3600 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair MK16GX4M2B3200C16 8GB
Corsair MK16GX4M2B3200C16 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905630-031.A00G 16GB
Kingston 9905630-031.A00G 16GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
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Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M474A1G43EB1-CRC 8GB
Samsung M474A1G43EB1-CRC 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
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Corsair CMSX32GX4M2A3200C22 16GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Kingston XW21KG-HYD-NX 8GB
Kingston XW21KG-HYD-NX 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston 9905624-033.A00G 8GB
Kingston 9905624-033.A00G 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Corsair CMK16GX4M2E3200C16 8GB
Corsair CMK16GX4M2E3200C16 8GB
内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
内存RAM