ASint Technology SSA302G08-EGN1C 4GB vs Samsung M393A4K40BB2-CTD 32GB

总分

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分

Samsung M393A4K40BB2-CTD 32GB

Samsung M393A4K40BB2-CTD 32GB

差异规格评论

差异

ASint Technology SSA302G08-EGN1C 4GB

需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 44

左右 41% 更低的延时
更快的读取速度，GB/s

12.6 11.7

测试中的平均数值
更快的写入速度，GB/s

9.5 9.0

测试中的平均数值

Samsung M393A4K40BB2-CTD 32GB

需要考虑的原因
Samsung M393A4K40BB2-CTD 32GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

ASint Technology SSA302G08-EGN1C 4GB

Samsung M393A4K40BB2-CTD 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 44
读取速度，GB/s

12.6 11.7
写入速度，GB/s

9.5 9.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2174 2727

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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InnoDisk Corporation M4C0-AGS1TCSJ 16GB

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Corsair CMX4GX3M2A1600C9 2GB

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A-DATA Technology AO1P32NC8T1-BCSS 8GB

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Kingston 9905316-106.A02LF 1GB

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V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB

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A-DATA Technology DDR4 2400 16GB

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Corsair CMK16GX4M2Z2933C16 8GB

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Kingston KHX1600C9D3/4G 4GB

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Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

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G Skill Intl F4-2400C17-4GFT 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB

Kingston K821PJ-MID 16GB

Kingston K821PJ-MID 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

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Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB