Avant Technology F6451U64F9333G 4GB vs G Skill Intl F4-2133C15-4GRB 4GB

总分

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

总分

G Skill Intl F4-2133C15-4GRB 4GB

G Skill Intl F4-2133C15-4GRB 4GB

差异规格评论

差异

Avant Technology F6451U64F9333G 4GB

需要考虑的原因
Avant Technology F6451U64F9333G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 39

左右 31% 更低的延时

G Skill Intl F4-2133C15-4GRB 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GRB 4GB

报告一个错误

更快的读取速度，GB/s

13.1 12.8

测试中的平均数值
更快的写入速度，GB/s

10.3 6.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Avant Technology F6451U64F9333G 4GB

G Skill Intl F4-2133C15-4GRB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 39
读取速度，GB/s

12.8 13.1
写入速度，GB/s

6.7 10.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 2574

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1G44BB0-CWE 8GB

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Avant Technology F6451U64F9333G 4GB

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G Skill Intl F4-2133C15-4GRB 4GB

G Skill Intl F4-2133C15-4GRB 4GB

Kingston KVT8FP-HYC 4GB

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Crucial Technology BLS8G4D240FSA.16FBD 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 9905584-016.A00LF 4GB

Super Talent F26UB16GH 16GB

Super Talent F26UB16GH 16GB

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Samsung M386B4G70DM0-CMA4 32GB

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Kingston KF3200C20S4/16GX 16GB

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Crucial Technology CT8G4DFD824A.C16FF 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB