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Chun Well Technology Holding Limited MD4U0836165BCW 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB vs GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

总分
star star star star star
Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

总分
star star star star star
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

差异 规格 评论

差异

Chun Well Technology Holding Limited MD4U0836165BCW 8GB 需要考虑的原因
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
报告一个错误
  • 更快的读取速度，GB/s
    21.4 left arrow 18.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.2 left arrow 15.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB 需要考虑的原因
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 31
    左右 -11% 更低的延时

规格

完整的技术规格清单
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 28
  • 读取速度，GB/s
    21.4 left arrow 18.8
  • 写入速度，GB/s
    16.2 left arrow 15.3
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3809 left arrow 3637

Chun Well Technology Holding Limited MD4U0836165BCW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Chun Well Technology Holding Limited MD4U0836165BCW 8GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Corsair CMW32GX4M2Z2933C16 16GB
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Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
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G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston CBD24D4S7D8MB-16 16GB
Kingston CBD24D4S7D8MB-16 16GB
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Ramaxel Technology RMT3160ED58E9W1600 4GB
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Avant Technology W6451U66J7240ND 4GB
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A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
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G Skill Intl F4-3866C18-16GTZR 16GB
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Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
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Crucial Technology CT8G4DFS8213.C8FH1 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB
内存RAM
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Micron Technology 18HTF12872AY-800F1 1GB
Samsung M474A4G43MB1-CTD 32GB
Samsung M474A4G43MB1-CTD 32GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
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Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
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Team Group Inc. TEAMGROUP-ED4-2400 16GB
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