Corsair CM2X1024-6400 1GB vs SK Hynix HMA41GR7MFR4N-TFTD 8GB

总分

Corsair CM2X1024-6400 1GB

Corsair CM2X1024-6400 1GB

总分

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

差异规格评论

差异

Corsair CM2X1024-6400 1GB

需要考虑的原因
Corsair CM2X1024-6400 1GB

报告一个错误

SK Hynix HMA41GR7MFR4N-TFTD 8GB

需要考虑的原因
SK Hynix HMA41GR7MFR4N-TFTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 54

左右 -50% 更低的延时
更快的读取速度，GB/s

9.1 4

测试中的平均数值
更快的写入速度，GB/s

7.5 2,254.8

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair CM2X1024-6400 1GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 36
读取速度，GB/s

4,715.6 9.1
写入速度，GB/s

2,254.8 7.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

857 1927

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Peak Electronics 256X64M-67E 2GB

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Kingston XRGM6C-MIB 16GB

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Mushkin MRA4S300GJJM16G 16GB

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Kingston 99U5702-025.A00G 8GB

Kingston 99U5702-025.A00G 8GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Heoriady HX2666CX15D4/4G 4GB

Heoriady HX2666CX15D4/4G 4GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Kingston 9905702-135.A00G 8GB

Kingston 9905702-135.A00G 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Kingston XF875V-MIH 8GB

Kingston XF875V-MIH 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-2666C15-8GRKB 8GB

G Skill Intl F4-2666C15-8GRKB 8GB