Corsair CM2X1024-6400C4 1GB vs Samsung M393A1G40DB1-CRC 8GB

总分

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

总分

Samsung M393A1G40DB1-CRC 8GB

Samsung M393A1G40DB1-CRC 8GB

差异规格评论

差异

Corsair CM2X1024-6400C4 1GB

需要考虑的原因
Corsair CM2X1024-6400C4 1GB

报告一个错误

更快的读取速度，GB/s

4 10.8

测试中的平均数值

Samsung M393A1G40DB1-CRC 8GB

需要考虑的原因
Samsung M393A1G40DB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

48 54

左右 -13% 更低的延时
更快的写入速度，GB/s

8.1 1,973.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Corsair CM2X1024-6400C4 1GB

Samsung M393A1G40DB1-CRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 48
读取速度，GB/s

4,967.4 10.8
写入速度，GB/s

1,973.5 8.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

776 2431

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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TwinMOS 8DHE3MN8-HATP 2GB

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Apacer Technology 78.B1GN3.AZ32B 4GB

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Kingston 99U5469-045.A00LF 4GB

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Samsung M471A1K43BB0-CPB 8GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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SK Hynix HMA81GR7AFR8N-UH 8GB

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Kingston 9905458-017.A01LF 4GB

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G Skill Intl F4-3000C15-16GVR 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Kingston 9905403-038.A00LF 4GB

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Kingston KVR24N17S8/4 4GB

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Kingston 9905702-010.A00G 8GB

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Kingston 9905624-025.A00G 8GB

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Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

V-GEN D4S8GL32A8TS 8GB

V-GEN D4S8GL32A8TS 8GB

Kingston 99P5474-014.A00LF 4GB

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Crucial Technology BLS4G4D240FSA.8FARG 4GB

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Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Samsung M393A1G40DB1-CRC 8GB

Samsung M393A1G40DB1-CRC 8GB