Ramaxel Technology RMT3010EC58E8F1333 2GB vs SK Hynix HMA81GR7AFR8N-UH 8GB

总分

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

总分

SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMA81GR7AFR8N-UH 8GB

差异规格评论

差异

Ramaxel Technology RMT3010EC58E8F1333 2GB

需要考虑的原因
Ramaxel Technology RMT3010EC58E8F1333 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 57

左右 54% 更低的延时
更快的读取速度，GB/s

13.5 9.4

测试中的平均数值
更快的写入速度，GB/s

7.8 7.6

测试中的平均数值

SK Hynix HMA81GR7AFR8N-UH 8GB

需要考虑的原因
SK Hynix HMA81GR7AFR8N-UH 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3010EC58E8F1333 2GB

SK Hynix HMA81GR7AFR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 57
读取速度，GB/s

13.5 9.4
写入速度，GB/s

7.8 7.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1932 2170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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SK Hynix HMA81GR7AFR8N-UH 8GB

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Corsair CMX4GX3M2A1600C9 2GB

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Crucial Technology CT32G4SFD832A.C16FE 32GB

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Samsung M378B1G73EB0-CK0 8GB

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Kingston 9905625-029.A00G 8GB

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Samsung M393B1K70CH0-CH9 8GB

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Corsair CMK8GX4M2A2666C16 4GB

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Kingston 9905584-016.A00LF 4GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB