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Corsair CM2X1024-8500C5D 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Corsair CM2X1024-8500C5D 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

总分
star star star star star
Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

差异 规格 评论

差异

Corsair CM2X1024-8500C5D 1GB 需要考虑的原因
Corsair CM2X1024-8500C5D 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,034.7 left arrow 11.8
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 48
    左右 -85% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Corsair CM2X1024-8500C5D 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 26
  • 读取速度，GB/s
    4,295.1 left arrow 15.6
  • 写入速度，GB/s
    2,034.7 left arrow 11.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    650 left arrow 2382

Corsair CM2X1024-8500C5D 1GB RAM的比较

Kingston KHX8500D2K2/2GN 1GB
Corsair CM2X2048-8500C5 2GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB RAM的比较

Samsung M393B2G70BH0-CH9 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston CBD24D4S7D8MB-16 16GB
Kingston CBD24D4S7D8MB-16 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMR32GX4M2C3333C16 16GB
Corsair CMR32GX4M2C3333C16 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston KF3733C19D4/16GX 16GB
Kingston KF3733C19D4/16GX 16GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Corsair CMD32GX4M2C3200C16 16GB
Corsair CMD32GX4M2C3200C16 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3000C16-8GVSB 8GB
G Skill Intl F4-3000C16-8GVSB 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston 9965690-002.A00G 8GB
Kingston 9965690-002.A00G 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9905702-121.A00G 8GB
Kingston 9905702-121.A00G 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Kingston 9905403-060.A00LF 4GB
Kingston 9905403-060.A00LF 4GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Corsair CMK128GX4M4E3200C16 32GB
Corsair CMK128GX4M4E3200C16 32GB
内存RAM
Corsair CMY8GX3M2A2133C8 4GB
Corsair CMY8GX3M2A2133C8 4GB
G Skill Intl F4-3200C14-8GTRG 8GB
G Skill Intl F4-3200C14-8GTRG 8GB
内存RAM