Corsair CM2X1024-8500C5D 1GB vs Kingston HP26D4U9S8MD-8 8GB

总分

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

总分

Kingston HP26D4U9S8MD-8 8GB

Kingston HP26D4U9S8MD-8 8GB

差异规格评论

差异

Corsair CM2X1024-8500C5D 1GB

需要考虑的原因
Corsair CM2X1024-8500C5D 1GB

报告一个错误

更快的读取速度，GB/s

4 14.5

测试中的平均数值

Kingston HP26D4U9S8MD-8 8GB

需要考虑的原因
Kingston HP26D4U9S8MD-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 48

左右 -55% 更低的延时
更快的写入速度，GB/s

9.4 2,034.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Corsair CM2X1024-8500C5D 1GB

Kingston HP26D4U9S8MD-8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

48 31
读取速度，GB/s

4,295.1 14.5
写入速度，GB/s

2,034.7 9.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

650 2533

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFD824A.M16FB 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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G Skill Intl F4-2666C15-8GVB 8GB

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Nanya Technology M2F8G64CB8HB5N-DI 8GB

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Samsung M391B5673EH1-CH9 2GB

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Samsung M471B5673FH0-CF8 2GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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G Skill Intl F4-2400C17-8GISM 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

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Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Corsair CMD16GX4M4A2666C16 4GB

Corsair CMD16GX4M4A2666C16 4GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Team Group Inc. TEAMGROUP-SD4-2666 16GB

Team Group Inc. TEAMGROUP-SD4-2666 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Corsair CMK16GX4M1A2400C16 16GB

Corsair CMK16GX4M1A2400C16 16GB