Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Corsair MK16GX44B3000C15 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Corsair MK16GX44B3000C15 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

总分
star star star star star
Corsair MK16GX44B3000C15 4GB

Corsair MK16GX44B3000C15 4GB

差异

  • 低于PassMark测试中的延时,ns
    21 left arrow 28
    左右 -33% 更低的延时
  • 更快的读取速度,GB/s
    16.1 left arrow 12.4
    测试中的平均数值
  • 更快的写入速度,GB/s
    13.5 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽,mbps
    16000 left arrow 12800
    左右 1.25 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Corsair MK16GX44B3000C15 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    28 left arrow 21
  • 读取速度,GB/s
    12.4 left arrow 16.1
  • 写入速度,GB/s
    9.6 left arrow 13.5
  • 内存带宽,mbps
    12800 left arrow 16000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-16000, 1.2V, TBD1 V, TBD2 V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data
  • 排名PassMark (越多越好)
    2329 left arrow 3435
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最新比较