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Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB

Samsung M393B2G70BH0-CK0 16GB vs Micron Technology 8ATF2G64AZ-3G2B1 16GB

总分
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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Micron Technology 8ATF2G64AZ-3G2B1 16GB 需要考虑的原因
Micron Technology 8ATF2G64AZ-3G2B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 54
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 37
  • 读取速度，GB/s
    9.2 left arrow 19.5
  • 写入速度，GB/s
    8.1 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 3355

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB RAM的比较

Kingston 9905471-002.A00LF 2GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
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G Skill Intl F5-6400J3239G16G 16GB
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内存RAM
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内存RAM
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Micron Technology 16JTF51264HZ-1G6M1 4GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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Corsair CMK16GX4M2B2800C14 8GB
内存RAM
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Unifosa Corporation HU564404EP0200 4GB
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Micron Technology 36ASF4G72PZ-2G6D1 32GB
内存RAM