Corsair CM2X1024-8500C5D 1GB vs Micron Technology 18ASF2G72PDZ-2G3A1 16GB

总分

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

总分

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

差异规格评论

差异

Corsair CM2X1024-8500C5D 1GB

需要考虑的原因
Corsair CM2X1024-8500C5D 1GB

报告一个错误

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

41 48

左右 -17% 更低的延时
更快的读取速度，GB/s

7.7 4

测试中的平均数值
更快的写入速度，GB/s

7.6 2,034.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Corsair CM2X1024-8500C5D 1GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

48 41
读取速度，GB/s

4,295.1 7.7
写入速度，GB/s

2,034.7 7.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

650 1855

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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AMD R7S48G2400U2S 8GB

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Samsung M378T5663QZ3-CF7 2GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology BL16G32C16U4BL.16FE 16GB

Crucial Technology BL16G32C16U4BL.16FE 16GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Corsair CMK32GX4M4B3866C18 8GB

Corsair CMK32GX4M4B3866C18 8GB

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB