Corsair CMZ16GX3M2A1866C9 8GB vs G Skill Intl F4-2800C15-16GRKD 16GB

总分

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

总分

G Skill Intl F4-2800C15-16GRKD 16GB

G Skill Intl F4-2800C15-16GRKD 16GB

差异规格评论

差异

Corsair CMZ16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMZ16GX3M2A1866C9 8GB

报告一个错误

G Skill Intl F4-2800C15-16GRKD 16GB

需要考虑的原因
G Skill Intl F4-2800C15-16GRKD 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 -39% 更低的延时
更快的读取速度，GB/s

14.1 14

测试中的平均数值
更快的写入速度，GB/s

10.9 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A1866C9 8GB

G Skill Intl F4-2800C15-16GRKD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 28
读取速度，GB/s

14.0 14.1
写入速度，GB/s

9.0 10.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2489 2931

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M391B5673EH1-CH9 2GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F3-1866C8-8GTX 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMK32GX4M1A2400C16 32GB

Corsair CMK32GX4M1A2400C16 32GB

Samsung M471B1G73QH0-YK0 8GB

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Golden Empire CL15-15-15 D4-2400 4GB

Golden Empire CL15-15-15 D4-2400 4GB

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Corsair CMX8GX3M2A2000C9 4GB

Crucial Technology BLS8G4D240FSB.16FBR2 8GB

Crucial Technology BLS8G4D240FSB.16FBR2 8GB