Corsair CM3X2G1600C9 2GB vs Patriot Memory (PDP Systems) 4000 C16 Series 8GB

总分

Corsair CM3X2G1600C9 2GB

Corsair CM3X2G1600C9 2GB

总分

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

差异规格评论

差异

Corsair CM3X2G1600C9 2GB

需要考虑的原因
Corsair CM3X2G1600C9 2GB

报告一个错误

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4000 C16 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 38

左右 -100% 更低的延时
更快的读取速度，GB/s

21.9 11.9

测试中的平均数值
更快的写入速度，GB/s

22.2 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CM3X2G1600C9 2GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 19
读取速度，GB/s

11.9 21.9
写入速度，GB/s

7.8 22.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1889 4574

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B5170FH0-CH9 4GB

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Kingston KVR16N11/8-SP 8GB

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Corsair CMK8GX4M1Z3600C18 8GB

Corsair CMK8GX4M1Z3600C18 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Kingston CBD24D4S7D8ME-16 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Essencore Limited KD44GU481-26N1600 4GB

Essencore Limited KD44GU481-26N1600 4GB