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Corsair CM3X8GA2400C11Y2R 8GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
比较
Corsair CM3X8GA2400C11Y2R 8GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
总分
Corsair CM3X8GA2400C11Y2R 8GB
总分
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
差异
规格
评论
差异
需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB
报告一个错误
低于PassMark测试中的延时,ns
20
32
左右 38% 更低的延时
需要考虑的原因
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
报告一个错误
更快的读取速度,GB/s
19.4
19.1
测试中的平均数值
更快的写入速度,GB/s
16.3
13.1
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Corsair CM3X8GA2400C11Y2R 8GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
20
32
读取速度,GB/s
19.1
19.4
写入速度,GB/s
13.1
16.3
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
3252
3726
Corsair CM3X8GA2400C11Y2R 8GB RAM的比较
Avexir Technologies Corporation DDR3-2800 CL12 8GB 8GB
Corsair CMY8GX3M2B2133C9 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Chun Well Technology Holding Limited CL16-20-20 D4-3200
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Chun Well Technology Holding Limited ND4U1636181DRLDE 1
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Samsung M386A4K40BB0-CRC 32GB
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Corsair CMX4GX3M2A1600C9 2GB
Kingston KHX2666C16D4/4G 4GB
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G Skill Intl F4-3600C17-16GTZKK 16GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology BL8G32C16U4WL.M8FE1 8GB
报告一个错误
×
Bug description
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