Corsair CMD16GX3M2A1866C9 8GB vs Crucial Technology BL16G32C16U4W.M8FB1 16GB

总分

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

总分

Crucial Technology BL16G32C16U4W.M8FB1 16GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

差异规格评论

差异

Corsair CMD16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB

报告一个错误

Crucial Technology BL16G32C16U4W.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4W.M8FB1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 34

左右 -6% 更低的延时
更快的读取速度，GB/s

18.7 16

测试中的平均数值
更快的写入速度，GB/s

14.6 10.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M2A1866C9 8GB

Crucial Technology BL16G32C16U4W.M8FB1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 32
读取速度，GB/s

16.0 18.7
写入速度，GB/s

10.3 14.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2782 3659

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT351S6AFR8C-G7 4GB

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Apacer Technology 78.01G86.9H50C 1GB

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Mushkin MR[ABC]4U360JNNM8G 8GB

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OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

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AMD AE34G1601U1 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Kingston KHX3200C16D4/32GX 32GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB