Corsair CMD16GX3M2A1866C9 8GB vs G Skill Intl F4-2133C15-4GRB 4GB

总分

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

总分

G Skill Intl F4-2133C15-4GRB 4GB

G Skill Intl F4-2133C15-4GRB 4GB

差异规格评论

差异

Corsair CMD16GX3M2A1866C9 8GB

需要考虑的原因
Corsair CMD16GX3M2A1866C9 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 39

左右 13% 更低的延时
更快的读取速度，GB/s

16 13.1

测试中的平均数值

G Skill Intl F4-2133C15-4GRB 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GRB 4GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD16GX3M2A1866C9 8GB

G Skill Intl F4-2133C15-4GRB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 39
读取速度，GB/s

16.0 13.1
写入速度，GB/s

10.3 10.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2782 2574

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Crucial Technology BL32G32C16U4B.M16FB1 32GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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Kingston ACR26D4U9S8ME-8 8GB

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Samsung 1600 CL10 Series 8GB

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Apacer Technology 78.DAGNN.4030B 16GB

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SK Hynix HYMP125U64CP8-S6 2GB

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G Skill Intl F4-3000C15-4GTZB 4GB

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Corsair CMY8GX3M2A2133C8 4GB

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Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Corsair CM4X4GF2666C16K4 4GB

Corsair CM4X4GF2666C16K4 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology BLS8G4D240FSC.16FBD 8GB

Crucial Technology BLS8G4D240FSC.16FBD 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

G Skill Intl F4-3466C16-4GVK 4GB

G Skill Intl F4-3466C16-4GVK 4GB