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Samsung 1600 CL10 Series 8GB
Apacer Technology 78.DAGNN.4030B 16GB
比较
Samsung 1600 CL10 Series 8GB vs Apacer Technology 78.DAGNN.4030B 16GB
总分
Samsung 1600 CL10 Series 8GB
总分
Apacer Technology 78.DAGNN.4030B 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
64
左右 61% 更低的延时
需要考虑的原因
Apacer Technology 78.DAGNN.4030B 16GB
报告一个错误
更快的读取速度,GB/s
17.9
16.1
测试中的平均数值
更快的写入速度,GB/s
10.2
10.1
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Apacer Technology 78.DAGNN.4030B 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
64
读取速度,GB/s
16.1
17.9
写入速度,GB/s
10.1
10.2
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2764
2194
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Apacer Technology 78.DAGNN.4030B 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT2K102464BD160B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 99U5584-005.A00LF 4GB
Crucial Technology BL8G24C16U4B.8FB 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMK16GX4M2E4333C19 8GB
Kingston 99U5403-036.A00G 4GB
Corsair CMD32GX4M2C3200C16 16GB
Samsung M393B5170FH0-CH9 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Super Talent F24UB16GV 16GB
Kingston 99U5474-037.A00LF 4GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9905700-097.A00G 8GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMSX16GX4M2A3000C18 8GB
报告一个错误
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