SK Hynix HYMP112S64CP6-S6 1GB vs SK Hynix HMA41GR7MFR4N-TF 8GB

总分

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

总分

SK Hynix HMA41GR7MFR4N-TF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB

差异规格评论

差异

SK Hynix HYMP112S64CP6-S6 1GB

需要考虑的原因
SK Hynix HYMP112S64CP6-S6 1GB

报告一个错误

更快的读取速度，GB/s

4 10.1

测试中的平均数值

SK Hynix HMA41GR7MFR4N-TF 8GB

需要考虑的原因
SK Hynix HMA41GR7MFR4N-TF 8GB

报告一个错误

低于PassMark测试中的延时，ns

52 65

左右 -25% 更低的延时
更快的写入速度，GB/s

7.5 1,711.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HMA41GR7MFR4N-TF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 52
读取速度，GB/s

4,018.7 10.1
写入速度，GB/s

1,711.1 7.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

513 2176

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 4ATF51264HZ-2G3B1 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Corsair CMW32GX4M2Z3600C18 16GB

Corsair CMW32GX4M2Z3600C18 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Asgard VMA42UH-MEC1U2AJ2 16GB

Asgard VMA42UH-MEC1U2AJ2 16GB