Nanya Technology NT512T64U88B0BY-3C 512MB vs Crucial Technology BL32G32C16U4B.M16FB1 32GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 17

测试中的平均数值

Crucial Technology BL32G32C16U4B.M16FB1 32GB

需要考虑的原因
Crucial Technology BL32G32C16U4B.M16FB1 32GB

报告一个错误

低于PassMark测试中的延时，ns

36 71

左右 -97% 更低的延时
更快的写入速度，GB/s

15.2 1,322.6

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 36
读取速度，GB/s

2,831.6 17.0
写入速度，GB/s

1,322.6 15.2
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

399 3562

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Crucial Technology BL32G32C16U4B.M16FB1 32GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Hexon Technology Pte Ltd HEXON 1GB

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Avant Technology W641GU42J5213N3 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

SK Hynix HMA81GU6CJR8N-XN 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

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Crucial Technology BLS4G4D240FSB.8FARG? 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-2400C16-8GRSB 8GB

G Skill Intl F4-2400C16-8GRSB 8GB