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Corsair CMD8GX3M2A2800C12 4GB
Samsung M474A1G43EB1-CRC 8GB

Corsair CMD8GX3M2A2800C12 4GB vs Samsung M474A1G43EB1-CRC 8GB

总分
star star star star star
Corsair CMD8GX3M2A2800C12 4GB

Corsair CMD8GX3M2A2800C12 4GB

总分
star star star star star
Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

差异 规格 评论

差异

Corsair CMD8GX3M2A2800C12 4GB 需要考虑的原因
Corsair CMD8GX3M2A2800C12 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 22
    左右 9% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 17.2
    测试中的平均数值
Samsung M474A1G43EB1-CRC 8GB 需要考虑的原因
Samsung M474A1G43EB1-CRC 8GB
报告一个错误
  • 更快的写入速度，GB/s
    13.8 left arrow 12.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CMD8GX3M2A2800C12 4GB
Samsung M474A1G43EB1-CRC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    20 left arrow 22
  • 读取速度，GB/s
    17.3 left arrow 17.2
  • 写入速度，GB/s
    12.0 left arrow 13.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2568 left arrow 2989

Corsair CMD8GX3M2A2800C12 4GB RAM的比较

Mushkin 992038 8GB
G Skill Intl F4-3600C19-16GSXKB 16GB

Samsung M474A1G43EB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM