Corsair CMD8GX3M2A2800C12 4GB vs Transcend Information TS2GLH64V6B 16GB

总分

Corsair CMD8GX3M2A2800C12 4GB

Corsair CMD8GX3M2A2800C12 4GB

总分

Transcend Information TS2GLH64V6B 16GB

Transcend Information TS2GLH64V6B 16GB

差异规格评论

差异

Corsair CMD8GX3M2A2800C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2800C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 22

左右 9% 更低的延时

Transcend Information TS2GLH64V6B 16GB

需要考虑的原因
Transcend Information TS2GLH64V6B 16GB

报告一个错误

更快的读取速度，GB/s

17.9 17.3

测试中的平均数值
更快的写入速度，GB/s

14.5 12.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2800C12 4GB

Transcend Information TS2GLH64V6B 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 22
读取速度，GB/s

17.3 17.9
写入速度，GB/s

12.0 14.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2568 3411

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4400C17-16GVK 16GB

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Samsung M471B5173EB0-YK0 4GB

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Corsair CMK16GX4M2K4133C19 8GB

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AMD R748G2400S2S 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Team Group Inc. DDR4 3000 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

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Panram International Corporation M424016 4GB

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Kingston 99U5471-056.A00LF 8GB

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Kingston 9905700-011.A00G 8GB

Kingston 9905700-011.A00G 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Ramaxel Technology RMSA3270ME86H9F-2666 4GB

Ramaxel Technology RMSA3270ME86H9F-2666 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Corsair CMK8GX4M2C3000C16 4GB

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Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB