Corsair CMD8GX3M2A2933C12 4GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

报告一个错误

更快的读取速度，GB/s

16.9 13.5

测试中的平均数值
更快的写入速度，GB/s

15.2 9.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

13.5 16.9
写入速度，GB/s

9.3 15.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2278 3650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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G Skill Intl F4-4133C19-4GTZ 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT16G4SFD8266.C16FE 16GB

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Kingston 9905403-090.A01LF 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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G Skill Intl F4-3200C14-8GTZN 8GB

Samsung M393B1G70BH0-CK0 8GB

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Kingston RB24D4U7S8MB-8 8GB

Kingston RB24D4U7S8MB-8 8GB