Corsair CMD8GX3M2A2933C12 4GB vs G Skill Intl F4-3200C16-8GVK 8GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

G Skill Intl F4-3200C16-8GVK 8GB

G Skill Intl F4-3200C16-8GVK 8GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

G Skill Intl F4-3200C16-8GVK 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GVK 8GB

报告一个错误

更快的读取速度，GB/s

17.9 13.5

测试中的平均数值
更快的写入速度，GB/s

13.8 9.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

G Skill Intl F4-3200C16-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

13.5 17.9
写入速度，GB/s

9.3 13.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2278 3261

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMK32GX4M2B3333C16 16GB

Corsair CMK32GX4M2B3333C16 16GB

Corsair CMD8GX3M2A2933C12 4GB

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Kingston K531R8-MIN 4GB

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Kingston 99U5734-036.A00G 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3600C18-8GTRS 8GB

G Skill Intl F4-3600C18-8GTRS 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

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Kingston MSI21D4S15HAG/8G 8GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Corsair CMK32GX4M4B3600C16 8GB

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A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

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Kingston 9905734-018.A00G 16GB