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Corsair CMD8GX3M2A2933C12 4GB
Kingston KHX2400C12D4/4GX 4GB

Corsair CMD8GX3M2A2933C12 4GB vs Kingston KHX2400C12D4/4GX 4GB

总分
star star star star star
Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分
star star star star star
Kingston KHX2400C12D4/4GX 4GB

Kingston KHX2400C12D4/4GX 4GB

差异 规格 评论

差异

Corsair CMD8GX3M2A2933C12 4GB 需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 34
    左右 18% 更低的延时
Kingston KHX2400C12D4/4GX 4GB 需要考虑的原因
Kingston KHX2400C12D4/4GX 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 13.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CMD8GX3M2A2933C12 4GB
Kingston KHX2400C12D4/4GX 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 34
  • 读取速度，GB/s
    13.5 left arrow 15.5
  • 写入速度，GB/s
    9.3 left arrow 11.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2278 left arrow 2881

Corsair CMD8GX3M2A2933C12 4GB RAM的比较

Samsung M471B5273DH0-CK0 4GB
Mushkin 992015 (997015) 4GB

Kingston KHX2400C12D4/4GX 4GB RAM的比较

G Skill Intl F4-3600C16-8GTZKK 8GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Apacer Technology D12.2344DT.001 4GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
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内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston KHX2400C12D4/4GX 4GB
Kingston KHX2400C12D4/4GX 4GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
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G Skill Intl F4-3200C16-16GTRS 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
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Kingston 99U5403-468.A00LF 8GB
Kingston 99U5403-468.A00LF 8GB
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内存RAM
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内存RAM
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Kingmax Semiconductor KLDE88F-B8MO5 2GB
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Wilk Elektronik S.A. GR2400S464L17S/8G 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
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内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
内存RAM
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A-DATA Technology DDR3 1600 4GB
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Samsung M386A8K40BMB-CPB 64GB
内存RAM