Corsair CMD8GX3M2A2933C12 4GB vs Micron Technology 8ATF51264HZ-2G1A2 4GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Micron Technology 8ATF51264HZ-2G1A2 4GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 36

左右 22% 更低的延时
更快的写入速度，GB/s

9.3 9.0

测试中的平均数值

Micron Technology 8ATF51264HZ-2G1A2 4GB

需要考虑的原因
Micron Technology 8ATF51264HZ-2G1A2 4GB

报告一个错误

更快的读取速度，GB/s

13.6 13.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Micron Technology 8ATF51264HZ-2G1A2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 36
读取速度，GB/s

13.5 13.6
写入速度，GB/s

9.3 9.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2278 1778

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.C1GS7.DFW0C 8GB

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Kingston ACR32D4U2S8HD-8X 8GB

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Ramaxel Technology RMSA3270MB76H8F2400 2GB

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Apacer Technology 78.DAGNN.4030B 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BL32G32C16S4B.M16FB1 32GB

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Kingston ACR256X64D3S1333C9 2GB

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Crucial Technology CT8G4DFS632A.M4FE 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

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Micron Technology 8ATF1G64HZ-2G6J1 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMSX64GX4M4A2666C18 16GB

Corsair CMSX64GX4M4A2666C18 16GB