Corsair CMD8GX3M2A2933C12 4GB vs Samsung M386A8K40CM2-CRC 64GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Samsung M386A8K40CM2-CRC 64GB

Samsung M386A8K40CM2-CRC 64GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 32% 更低的延时
更快的读取速度，GB/s

13.5 8.2

测试中的平均数值
更快的写入速度，GB/s

9.3 5.4

测试中的平均数值

Samsung M386A8K40CM2-CRC 64GB

需要考虑的原因
Samsung M386A8K40CM2-CRC 64GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Samsung M386A8K40CM2-CRC 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 41
读取速度，GB/s

13.5 8.2
写入速度，GB/s

9.3 5.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2278 1704

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Team Group Inc. TEAMGROUP-SD4-2133 8GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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G Skill Intl F4-4400C18-8GTRS 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Kingston 99U5474-022.A00LF 2GB

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AMD R5316G1609U2K 8GB

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Micron Technology 8ATF1G64AZ-2G1B1 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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SK Hynix HMA41GR7BJR4N-UH 8GB

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Kingston 9905403-061.A00LF 2GB

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Maxsun MSD44G24Q3 4GB

Maxsun MSD44G24Q3 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

Samsung M378A1K43EB2-CWE 8GB

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Samsung M378B5673FH0-CH9 2GB

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Kingston 9965589-013.A00G 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

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Kingston 9905471-071.A00LF 8GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB