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Corsair CMD8GX3M2A2933C12 4GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

Corsair CMD8GX3M2A2933C12 4GB vs SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

总分
star star star star star
Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分
star star star star star
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

差异 规格 评论

差异

Corsair CMD8GX3M2A2933C12 4GB 需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 42
    左右 33% 更低的延时
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB 需要考虑的原因
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.7 left arrow 13.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CMD8GX3M2A2933C12 4GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 42
  • 读取速度，GB/s
    13.5 left arrow 15.7
  • 写入速度，GB/s
    9.3 left arrow 11.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2278 left arrow 2737

Corsair CMD8GX3M2A2933C12 4GB RAM的比较

Samsung M471B5273DH0-CK0 4GB
Mushkin 992015 (997015) 4GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2800C18-8GRS 8GB
G Skill Intl F4-2800C18-8GRS 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 9905701-141.A00G 16GB
Kingston 9905701-141.A00G 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT8G4SFS8213.C8FDR1 8GB
Crucial Technology CT8G4SFS8213.C8FDR1 8GB
内存RAM
Corsair VS2GB800D2 2GB
Corsair VS2GB800D2 2GB
Kingston 99C5316-019.A00LF 1GB
Kingston 99C5316-019.A00LF 1GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2800C18-8GRS 8GB
G Skill Intl F4-2800C18-8GRS 8GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Kingston 9965662-008.A01G 16GB
Kingston 9965662-008.A01G 16GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Apacer Technology 78.C2GFL.C720B 8GB
Apacer Technology 78.C2GFL.C720B 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Kingston 9905702-135.A00G 8GB
Kingston 9905702-135.A00G 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMK16GX4M2Z3200C16 8GB
Corsair CMK16GX4M2Z3200C16 8GB
内存RAM